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| DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES * Interchangeability of drain and source connections * Frequencies up to 700 MHz. APPLICATIONS * LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 C VDS = 20 V; VGS = -1 V; f = 1 MHz; Tamb = 25 C ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 CONDITIONS Fig.1 PINNING PIN 1 2 3 BF245A; BF245B; BF245C SYMBOL d s g drain source gate DESCRIPTION handbook, halfpage 2 1 3 g MAM257 d s Simplified outline (TO-92 variant) and symbol. MIN. - -0.25 - 2 6 12 - 3 - - - - - - - - - TYP. MAX. 30 -8 -30 6.5 15 25 300 6.5 - UNIT V V V mA mA mA mW mS pF 1.1 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGDO VGSO ID IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature up to Tamb = 75 C; open source open drain BF245A; BF245B; BF245C CONDITIONS - - - - - - - up to Tamb = 90 C; note 1 MIN. MAX. 30 -30 -30 25 10 300 300 +150 150 V V V UNIT mA mA mW mW C C -65 - 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm x 10 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient thermal resistance from junction to ambient STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff VGS PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF245A BF245B BF245C IDSS drain current BF245A BF245B BF245C IGSS gate cut-off current VGS = -20 V; VDS = 0 VGS = -20 V; VDS = 0; Tj = 125 C Note 1. Measured under pulse conditions: tp = 300 s; 0.02. VDS = 15 V; VGS = 0; note 1 2 6 12 - - 6.5 15 25 -5 -0.5 mA mA mA nA A CONDITIONS IG = -1 A; VDS = 0 ID = 10 nA; VDS = 15 V ID = 200 A; VDS = 15 V -0.4 -1.6 -3.2 -2.2 -3.8 -7.5 V V V MIN. -30 -0.25 - -8.0 MAX. V V UNIT CONDITIONS in free air VALUE 250 200 UNIT K/W K/W 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; unless otherwise specified. SYMBOL Cis Crs Cos gis gos yfs yrs yos fgfs F PARAMETER input capacitance reverse transfer capacitance output capacitance input conductance output conductance forward transfer admittance reverse transfer admittance output admittance cut-off frequency noise figure CONDITIONS BF245A; BF245B; BF245C MIN. - - - - - 3 - - - - - TYP. MAX. 4 1.1 1.6 250 40 - 6 1.4 25 700 1.5 - - - - - 6.5 - - - - - UNIT pF pF pF S S mS mS mS S MHz dB VDS = 20 V; VGS = -1 V; f = 1 MHz VDS = 20 V; VGS = -1 V; f = 1 MHz VDS = 20 V; VGS = -1 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; gfs = 0.7 of its value at 1 kHz VDS = 15 V; VGS = 0; f = 100 MHz; RG = 1 k (common source); input tuned to minimum noise handbook, halfpage -10 MGE785 handbook, halfpage 6 MGE789 IGSS (nA) -1 ID (mA) 5 4 typ -10-1 3 2 -10-2 1 -10-3 0 50 100 Tj (C) 150 0 -4 -2 VGS (V) 0 VDS = 0; VGS = -20 V. VDS = 15 V; Tj = 25 C. Fig.2 Gate leakage current as a function of junction temperature; typical values. Fig.3 Transfer characteristics for BF245A; typical values. 1996 Jul 30 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage 6 MBH555 ID (mA) 5 handbook, halfpage 15 MGE787 ID (mA) VGS = 0 V 10 4 3 -0.5 V 2 5 1 -1 V -1.5 V 0 0 10 VDS (V) 20 0 -4 -2 VGS (V) 0 VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.4 Output characteristics for BF245A; typical values. Fig.5 Transfer characteristics for BF245B; typical values. handbook, halfpage 15 MBH553 handbook, halfpage 30 MGE788 ID (mA) 10 VGS = 0 V ID (mA) 20 -0.5 V -1 V 5 -1.5 V -2 V -2.5 V 0 0 10 VDS (V) 20 0 -10 -5 VGS (V) 0 10 VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.6 Output characteristics for BF245B; typical values. Fig.7 Transfer characteristics for BF245C; typical values. 1996 Jul 30 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage 30 MBH554 MGE775 handbook, halfpage 4 ID (mA) 20 VGS = 0 V ID (mA) 3 VGS = 0 V 2 -0.5 V -1 V 10 -2 V 1 -1 V -1.5 V -3 V -4 V 0 0 10 VDS (V) 20 0 0 50 100 Tj (C) 150 VDS = 15 V; Tj = 25 C. VDS = 15 V. Fig.8 Output characteristics for BF245C; typical values. Fig.9 Drain current as a function of junction temperature; typical values for BF245A. MGE776 handbook, halfpage 15 handbook, halfpage 20 MGE779 ID (mA) 10 ID (mA) 16 VGS = 0 V 12 VGS = 0 V 8 5 -1 V -2 V 4 -2 V -4 V 0 0 0 50 100 Tj (C) 150 0 50 100 Tj (C) 150 VDS = 15 V. VDS = 15 V. Fig.10 Drain current as a function of junction temperature; typical values for BF245B. Fig.11 Drain current as a function of junction temperature; typical values for BF245C. 1996 Jul 30 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C 103 handbook, halfpage gis (A/V) 102 bis MGE778 102 bis (mA/V) 10 104 handbook, halfpage brs (A/V) 103 Crs MGE780 10 Crs (pF) 1 gis brs 10 1 102 10-1 1 10 102 f (MHz) 10-1 103 10 10 102 f (MHz) 10-2 103 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.12 Input admittance; typical values. Fig.13 Common source reverse admittance as a function of frequency; typical values. handbook, halfpage gfs, 10 MGE782 103 handbook, halfpage gos (A/V) 102 MGE783 10 bos (mA/V) 1 gos -bfs (mA/V) 8 bos 6 gfs 4 10 2 10-1 -bfs 1 10 102 f (MHz) 10-2 103 0 10 102 f (MHz) 103 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.14 Common-source forward transfer admittance as a function of frequency; typical values. Fig.15 Common-source output admittance as a function of frequency; typical values. 1996 Jul 30 7 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage 6 MGE777 MGE781 handbook, halfpage 1.5 Cis (pF) 4 Crs (pF) typ typ 1 2 0 0 -2 -4 -6 -8 -10 VGS (V) 0.5 0 -2 -4 -6 -8 -10 VGS (V) VDS = 20 V; f = 1 MHz; Tamb = 25 C. VDS = 20 V; f = 1 MHz; Tamb = 25 C. Fig.16 Input capacitance as a function of gate-source voltage; typical values. Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values. handbook, halfpage 8 MGE791 |yfs| (mA/V) 6 BF245A BF245B BF245C handbook, halfpage V -10 MGE784 GSoff at ID = 10 nA (V) -8 -6 4 -4 2 BF245C BF245B 0 -0 BF245A 0 10 20 IDSS at VGS = 0 (mA) 30 -2 0 5 10 15 ID (mA) 20 VDS = 15 V; f = 1 kHz; Tamb = 25 C. VDS = 15 V; Tj = 25 C. Fig.18 Forward transfer admittance as a function of drain current; typical values. Fig.19 Gate-source cut-off voltage as a function of drain current; typical values. 1996 Jul 30 8 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C 103 handbook, halfpage RDSon (k) 102 MGE790 handbook, halfpage 3 MGE786 F (dB) 2 typ 10 1 1 BF245A BF245B BF245C 10-1 0 -1 -2 -3 VGS (V) -4 0 1 10 102 f (MHz) 103 VDS = 0; f = 1 kHz; Tamb = 25 C. VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C. Input tuned to minimum noise. Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. Fig.21 Noise figure as a function of frequency; typical values. 1996 Jul 30 9 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE BF245A; BF245B; BF245C handbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 1 4.8 max 2.54 3 2 5.2 max 12.7 min 0.48 0.40 0.66 0.56 2.5 max (1) MBC015 - 1 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.22 TO-92 variant. 1996 Jul 30 10 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF245A; BF245B; BF245C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 11 |
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